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Chaintech APOGEE GT Blazer DDR3-1800 4GB Low Voltage Module

Chaintech APOGEE GT Blazer DDR3-1800 4GB Low Voltage Module

Written by Visionary and filed under News > Memories
Published on July 25, 2008, 2:16 pm

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Walton Chaintech today debuts the APOGEE GT Blazer DDR3 1800 4GB Low Voltage Memory Module. Supporting EPP 2.0 as well, APOGEE GT Blazer DDR3 1800 4GB kit attains the lowest voltage of 1.8V compared with other memory modules of similar speed in current market place for more power saving operation, and longer product life. APOGEE GT DDR3 1800 is made of 8-layer PCB with 16 pc Samsung 128M8 chips, which are well known for their exceptional overclocking capability. Each chip is handpicked for meeting strict quality requirements. Read More >>

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Comment by: longsiew on 25-Jul-2008 3:07 pm
finally samsung make its way to DDR3 hardcore premuim memory like TCCD does on DDR


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